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Analysis and Design of a Novel Junctionless Triple Metal Cylindrical Surround Gate (JLTM CSG) MOSFET

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Author Affiliations

  • 1Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology Allahabad, UP– 211004, INDIA
  • 2 Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Assam – 788010, INDIA

Res. J. Recent Sci., Volume 2, Issue (6), Pages 23-31, June,2 (2013)

Abstract

All transistors in use currently are based upon the laws of junctions. But due to dimensional scaling of the MOS transistors, the fabrication of the lower dimensional MOSFETs is becoming difficult due to the presence of the two junctions at source and drain sides. There is also decrement in the ON state current due to smaller dimensions of the transistors, since the current mainly flows through the inversion layer created at the SiO/Si interface. One alternate option for the improvement of the above mentioned characteristics was demonstrated by Colinge et. al. by Junctionless (JL) Transistors in the year 2010, which was conceptualized and patented by Lilienfield in 1925. The effect of the dimensional scaling on JL transistors are still to be explored in submicron regime. Being the depletion mode device, the JL devices are normally ON even in the absentia of the gate potential. So, to turn these devices OFF, one has to apply a gate potential. In this paper we propose a JL cylindrical surrounding gate (CSG) MOSFET using triple metal gate (TMG) structure to overcome this limitation of the Junctionless transistors. With the use of the TMG structure, many other parameters have also been observed to be improved. The analog and RF parameters of proposed junction less triple metal cylindrical surrounding gate (JLTM CSG) MOSFETs like transconductance, transconductance generation factor, intrinsic gain, early voltage, cutoff frequency, maximum frequency of oscillation, gain bandwidth product etc. have been verified to be also improved using the extensive 3D TCAD simulations.

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