9th International Science Congress (ISC-2019).  International E-publication: Publish Projects, Dissertation, Theses, Books, Souvenir, Conference Proceeding with ISBN.  International E-Bulletin: Information/News regarding: Academics and Research

Growth and Electrical Characterization of GeSeFe0.02 single Crystals

Author Affiliations

  • 1Department of Physics, Sardar Patel University, Vallabh Vidyanagar 388 120, Gujarat, INDIA
  • 2Faculty of Technology, Marwadi Education Foundations Group of Institutions, Rajkot, Gujarat, INDIA

Res.J.chem.sci., Volume 2, Issue (9), Pages 30-36, September,18 (2012)

Abstract

In present investigation, we have grown GeSeFe0.02 single crystals by direct vapor transport technique (DVT). Detailed growth parameters for these crystals are reported here like temperature profile, ampoules dimension and furnace dimension etc. The as grown crystals were found to have fairly large dimensions and we used these crystals for electrical measurements at different temperature and different frequency. Using Lakeshore 7504 series system, Hall measurement were performed and we determine the properties such as carrier resistivity, Hall coefficient (RH), carrier concentration (n) and mobility (µ) of these single crystals and its variation in the temperature range 300 K to 400 K by using magnetic field 1 kG, 2 kG and 3 kG. This electrical characterization is important to use these crystals for device fabrication up to temperature of 400 K and applied magnetic field of 3 kG.

References

  1. Barote Maqbul A., Yadav Abhijit A., Surywanshi Rangrao V., Deshmukh Lalasaheb P., Masumdar Elahipasha U, Chemical Bath Deposited PbSe Thin Films: Optical and Electrical Transport Properties, Research Journal of Chemical Sciences,2(1), 15-19 (2012)
  2. O’Hare P.A.G., Inorganic chalcogenides: high-tech materials, low- tech thermodynamics, J. Chem. Thermodynamics,19, 675 (1987)
  3. Abrikosov N.K.H., Bankina V.F., Poretskaya L.V., Shelimova L.E. and Skudnova E.V., Semiconducting IIVI, IV-VI and V-VI Compounds Plenum, New York, Chap. II (1969)
  4. Okazaki A., The Crystal Structure of Germanium Selenide GeSe, J. Phys. Soc. Japan, 13, 1151 (1958)
  5. Wiley J.D., A Breitschwerdt and E Schonherr, Optical absorption band edge in single-crystal GeS, Solid State Commun., 17, 355 (1975)
  6. Lukes F.and Dub P., Optical Properties of GeS, GeSe, SnS and SnSe, Univerzita, J E Purkyne, V Brne(1988)
  7. Yoffe A.D., Festkorperprobleme XII (Edited by Queisser H J) Pergamon-Viewag, Braunschweig (1973)
  8. Zallen R., Proc. 12th Int. Conf. Phys. Semicond, Stuttgart, 1974 (Edited by M H Pilkuhn ) Teubner, Stuttgart 621 (1974)
  9. Brebner J.L., The optical absorption edge in layer structures, J. Phys. Chem. Solids, 25 1427 (1964)
  10. Ralph H.I., The electronic absorption edge in layer type crystals, Solid State Commun., 3, 303 (1965)
  11. Solanki G.K., International workshop on the Physics of semiconductor devices, 1278 (1988)
  12. Mandalia H.C, Jain V.K. and Pattanaik B.N, Application of Super-molecules in Solar Energy Conversion- A Review, Research Journal of Chemical Sciences, 2(1), 89-102 (2012)
  13. Genwa K.R. and Chouhan Anju, Optimum efficiency of photogalvanic cell for solar energy conversion and storage containing Brilliant Black PN-Ammonium lauryl Sulphate – EDTA system, Research Journal of Recent Sciences, 117-121 (2012)
  14. Ezenwa I.A., Synthesis and Optical Characterization of Zinc Oxide Thin Film, Research Journal of Chemical Sciences,2(3), 26-30 (2012)
  15. Ezenwa I.A, Optical Analysis of Chemical bath Fabricated Cuo Thin Films, Research Journal of Recent Sciences, 1(1), 46-50 (2012)
  16. Ishihara Y. and Nakada I., Electrical conduction of GeSe at low temperatures, Phy. Stat. Solidi (b) 105 285 (1981)
  17. Glazov V.M., Kurbatov V.A. and Faradzhov A., Sov. Phys. Semicond., 21(3), 295 (1987)
  18. Le Nagard H., Levy Clement C., Katty A.and Lieth R.M.A., Photoelectrochemical characterization of GeSe, Mater. Res. Bull.,25, 495 (1990)
  19. Koon D.W. and Knibocker C.J., Measuring the Hall weighting function for square and cloverleaf geometries, Rev. Sci. Instrum,71, 587 (2000)
  20. Asanabe S. and Okazaki A., Electrical Properties of Germanium Selenide GeSe, J. Phys. Soc. Japan,15, 989 (1960)
  21. Vodenicharov C. and Parvanov S., Bulk limited conductivity in germanium monoselenide films, Materials Chemistry and Physics,21, 455 (1989)
  22. Solanki G.K., Agarwal M.K., Oza A.T., Chaki S.H. and Vaidya S.N., Physics of Semiconductor Devices, Narosa Publishing House, New Delhi, India (1998)