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Growth and Electrical Characterization of GeSeFe0.02 single Crystals

Author Affiliations

  • 1Department of Physics, Sardar Patel University, Vallabh Vidyanagar 388 120, Gujarat, INDIA
  • 2Faculty of Technology, Marwadi Education Foundations Group of Institutions, Rajkot, Gujarat, INDIA

Res.J.chem.sci., Volume 2, Issue (9), Pages 30-36, September,18 (2012)


In present investigation, we have grown GeSeFe0.02 single crystals by direct vapor transport technique (DVT). Detailed growth parameters for these crystals are reported here like temperature profile, ampoules dimension and furnace dimension etc. The as grown crystals were found to have fairly large dimensions and we used these crystals for electrical measurements at different temperature and different frequency. Using Lakeshore 7504 series system, Hall measurement were performed and we determine the properties such as carrier resistivity, Hall coefficient (RH), carrier concentration (n) and mobility (µ) of these single crystals and its variation in the temperature range 300 K to 400 K by using magnetic field 1 kG, 2 kG and 3 kG. This electrical characterization is important to use these crystals for device fabrication up to temperature of 400 K and applied magnetic field of 3 kG.


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